| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an evacuation member for an apparatus for manufacturing a semiconductor single crystal which can suppress a deposit of a dpoant or a dopant oxide and fixing an amorphous layer into the internal surface of the evacuation member, and which can easily remove them even if these are fixed in the internal surface of the evacuation member in an apparatus for manufacturing semiconductor single crystal such as silicon by the Czochralski method. Ž<P>SOLUTION: The evacuation member 10 for the apparatus for manufacturing the semiconductor single crystal is used for the apparatus for manufacturing the semiconductor single crystal in order to manufacture a semiconductor single crystal from a melt of a semiconductor added with the dopant in a pulling-up furnace, and for exhausting an evaporated substance and an evaporated dopant from the melt with a carrier gas outward, wherein a surface roughness Ra of an exposed surface 11 facing a space in which the evaporated substance and the evaporated dopant from the melt to be exhausted passes through among the evacuation member 10 is ≤0.2 μm. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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