| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a compound semiconductor epitaxial wafer capable of reducing a variation of a crystal growth distribution in a wafer surface by setting an optimal growth temperature of a nucleation layer with respect to the warpage of an individual single-crystal substrate. Ž<P>SOLUTION: In this method of manufacturing the compound semiconductor epitaxial wafer 10, a nucleation layer 2 is formed on a single-crystal substrate 1 formed of a plurality of elements, and a plurality of nitride semiconductor layers 3 are formed on the nucleation layer. In the method, warpage α (μm) of the single-crystal substrate 1 is measured before forming the nucleation layer 2, and a growth temperature T (°C) in forming the nucleation layer 2 is set to satisfy T<4α+1,180 with respect to the warpage α (μm) of the single-crystal substrate 1. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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