| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is highly reliable, and has high performance and high power, and to provide a fabrication method for the semiconductor device. Ž<P>SOLUTION: The semiconductor device includes a substrate 10, a nitride based compound semiconductor layer 12 placed on the substrate 10; an active area AA which is placed on the nitride based compound semiconductor layer 12, and is composed of an aluminum gallium nitride layer (Al<SB>x</SB>Ga<SB>1-x</SB>N where 0.1≤x≤1) 14; an element isolation region 34 which performs isolation of the active area AA mutually; a gate electrode 24, a source electrode 20, and a drain electrode 22 which have been placed on the active area AA surrounded by the isolation region 34; a gate terminal electrode 240, a source terminal electrode 200, and a drain terminal electrode 220 disposed on the element isolation region 34 and connected to the gate electrode 24, source electrode 20, and drain electrode 22; and a groove portion 28 formed between the gate electrode 24 and drain terminal electrode 220. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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