发明名称 Stacked Semiconductor Chips with Through Substrate Vias
摘要 Structures and methods of forming stacked chips are disclosed. In one embodiment, a first chip is disposed over a second chip, a top surface of the first and the second chip includes active circuitry. A first through substrate via is disposed within the first chip, the first through substrate via includes a protruding tip projecting below a bottom surface of the first chip, the bottom surface being opposite the top surface. A second through substrate via is disposed on the second chip, the second through substrate via including an opening, wherein the first protruding tip of the first chip is disposed within the opening of the second chip.
申请公布号 US2010065949(A1) 申请公布日期 2010.03.18
申请号 US20080212498 申请日期 2008.09.17
申请人 THIES ANDREAS;HEDLER HARRY;IRSIGLER ROLAND 发明人 THIES ANDREAS;HEDLER HARRY;IRSIGLER ROLAND
分类号 H01L23/538;H01L21/60 主分类号 H01L23/538
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