| 摘要 |
PURPOSE: A solid-state imaging device and a method for manufacturing the same are provided to secure the interfere state between a hole-accumulation layer and a insulation layer by forming an oxide layer including carbon in order to adjust the amount of charge. CONSTITUTION: A transistor includes a element isolation layer(101a), a transmission gate(5) and a diode. A semiconductor substrate(101) includes the transistor. A sensor includes a impurity diffusion layer(102) on the surface of the semiconductor substrate. Oxide insulation layers(9A, 9B) is formed on the sensor and includes carbon. The oxide insulation layers are negative charge accumulation layer including negative charge. |
