| 摘要 |
Provided is a sputtering method by which a thin film forming speed is prevented from greatly increasing and an excellent thin film is formed on a large area substrate to be processed, while suppressing abnormal discharge due to charge-up of the substrate. A plurality of targets (41a-41h) face a substrate (S) to be processed and are arranged in parallel at prescribed intervals in a sputter chamber (12). Power is supplied to each pair of targets at a prescribed frequency by alternately changing the polarity, and each target is alternately switched to an anode electrode and a cathode electrode to generate glow discharge between the anode electrode and the cathode electrode and form plasma atmosphere. Then, sputtering is performed to each target. While sputtering is performed, power supply to each target is intermittently reduced.
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