SEMICONDUCTOR DEVICE HAVING VERTICAL CHARGE-COMPENSATED STRUCTURE AND SUB-SURFACE CONNECTING LAYER AND METHOD

摘要

PURPOSE: A semiconductor device and a method thereof are provided to simplify the forming of resistor contact structure and improve robust performance by forming a first conductive path below the surface isolating a conductive path from stress and defect regions. CONSTITUTION: A semiconductor device and a method thereof comprise the body of a semiconductor material(11), a body region(31) of a second conductive type, a source area(33) of a first conductive type, and a trench control structure. The body of the semiconductor material is formed with a vertical charge-compensated structure. The body region of the second conductive type is formed in the body of the semiconductor material adjacent to the vertical charge-compensated structure. The source area of the first conductive type is formed to be contiguous to the body region. The trench control structure is formed to be contiguous to the source area and the body region.