| 摘要 |
PURPOSE: A semiconductor film structure and a method of formation thereof, even though the complex process of the existing board manufacture technology or the ELO method is not used, the problem that 2 step growth method has in the different substrate can be solved altogether with the simple method of the eutectic phase, it economics, the loss can be reduced sharply. CONSTITUTION: A semiconductor film structure and a method of formation thereof comprise a compound semiconductor buffer layer(110), a carbon-contained layers(130), and a compound semiconductor layer(120). A compound semiconductor buffer layer is formed on a substrate(100). A carbon-contained layer is at least inserted among a buffer layer inside and layer inside into one place. A compound semiconductor epi layer is formed on the buffer layer.
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