发明名称 |
Nitride-based semiconductor light emitting device and method of manufacturing the same |
摘要 |
<p>A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The nitride-based semiconductor light emitting device comprises an n-clad layer, an active layer, and a p-clad layer, which are sequentially stacked on a substrate, wherein the n-clad layer comprises a first clad layer, a second clad layer, and a light extraction layer interposed between the first clad layer and the second clad layer and composed of an array of a plurality of nano-posts, the light extraction layer diffracting or/and scattering light generated in the active layer.
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申请公布号 |
EP1818991(A3) |
申请公布日期 |
2010.03.17 |
申请号 |
EP20060118864 |
申请日期 |
2006.08.14 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD.;SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION |
发明人 |
LEE, JEONG-WOOK;JEON, HEON-SU;YOON, SUK-HO;KIM, JOO-SUNG |
分类号 |
H01L33/00;H01L33/06;H01L33/10;H01L33/32 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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