OXIDE SINTER, PROCESS FOR PRODUCING THE SAME, TARGET, AND TRANSPARENT CONDUCTIVE FILM AND TRANSPARENT CONDUCTIVE SUBSTRATE BOTH OBTAINED FROM THE TARGET

摘要

A sputtering target or ion-plating tablet with which high-rate and nodule-less deposition can be realized; an oxide sinter optimal for obtaining the target or tablet; a process for producing the sinter; and a low-resistivity transparent conductive film obtained from the target or tablet and reduced in blue-light absorption. The oxide sinter comprises indium and gallium in the form of oxides, and is characterized in that it includes an InOphase of a bixbite structure as the main crystal phase and that either a GaInOphase of a β-GaOtype structure or a combination of a GaInOphase and a (Ga,In)Ophase is finely dispersed in the main crystal phase as crystal grains having an average grain diameter of 5 μm or smaller. The oxide sinter is further characterized by having a gallium content of 10-35 at.%, excluding 35 at.%, in terms of Ga/(In+Ga) atom number ratio.