发明名称 |
TETRACARBOXYLIC DIIMIDE SEMICONDUCTOR FOR THIN FILM TRANSISTORS |
摘要 |
<p>A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to one or both of the imide nitrogen atoms, a substituted or unsubstituted heterocycloalkyl ring system. Such transistors can further comprise spaced apart first and second contacts or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 200° C.</p> |
申请公布号 |
EP2162932(A2) |
申请公布日期 |
2010.03.17 |
申请号 |
EP20080779758 |
申请日期 |
2008.06.25 |
申请人 |
EASTMAN KODAK COMPANY |
发明人 |
SHUKLA, DEEPAK;WELTER, THOMAS, ROBERT;AHEARN, WENDY, G. |
分类号 |
H01L51/00 |
主分类号 |
H01L51/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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