发明名称 |
A METHOD FOR PRODUCING A COPPER CONTACT |
摘要 |
<p>A method for producing a contact through the pre-metal dielectric (PMD) layer of an integrated circuit, between the front end of line and the back end of line, and the device produced thereby are disclosed. The PMD layer includes oxygen. In one aspect, the method includes producing a hole in the PMD, depositing a conductive barrier layer at the bottom of the hole, depositing a CuMn alloy on the bottom and side walls of the hole, filling the remaining portion of the hole with Cu. The method further includes performing an anneal process to form a barrier on the side walls of the hole, wherein the barrier has an oxide including Mn. The method further includes performing a CMP process.</p> |
申请公布号 |
EP2162906(A1) |
申请公布日期 |
2010.03.17 |
申请号 |
EP20080774503 |
申请日期 |
2008.06.29 |
申请人 |
IMEC;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIU, CHUNG-SHI;BEYER, GERALD;DEMUYNCK, STEVEN;TOKEI, ZSOLT;PALMANS, ROGER;ZHAO, CHAO;CHEN-HUA, YU |
分类号 |
H01L21/768;H01L23/485;H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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