| 摘要 |
PURPOSE: A PIP capacitor array and manufacturing method thereof can obtain bigger capacitance In a semiconductor substrate of a same area. CONSTITUTION: A PIP capacitor array and manufacturing method thereof comprises a step of forming a plurality of upper electrodes having an insulating layer(4, 30) and a lower electrode(3) on a semiconductor substrate(1), a step of forming the upper electrode and bottom electrode of the plurality having insulating layers on the interval, a step that one among the upper electrode and bottom electrode it is electrically connected to the first metal wiring(10), a step of evaporating an insulating layer with a constant thickness on the first metal wiring. The insulating layer is etched and the other one and step forming the electrically connected second metal wiring(20) are included among the upper electrode and bottom electrode.
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