Leaded semiconductor power module with direct bonding and double sided cooling

摘要

A leaded semiconductor power module (10/10') includes a first heatsink (24/24'), an electrically insulated substrate (40) thermally coupled to the first heatsink (24/24'), one or more semiconductor chips (12-18), a leadframe substrate (42), and a second heatsink (22/22') thermally coupled to the leadframe substrate (42), the assembly being overmolded with an encapsulant (20/20') to expose the first heatsink (24/24'), the second heatsink (22/22') and peripheral terminals (26-34) of the leadframe substrate (42). The semiconductor chips (12-18) are electrically and structurally coupled to both the insulated substrate (40) and the leadframe substrate (42), and conductive spacers (90-96) electrically and structurally couple the insulated substrate (40) to the leadframe substrate (42).