| 摘要 |
<p>PURPOSE: A method of manufacturing a semiconductor device is provided to improve the topology between a high and a low voltage regions by performing a two-step oxide growth. CONSTITUTION: A pad oxide layer(20) and a pad nitride layer(30) are formed on a semiconductor substrate(10). The substrate is defined with a high and a low voltage region(100,200). The pad nitride layer of the high voltage region is removed. A sacrificial oxide layer is grown on the substrate of the high voltage region and in the substrate of the high voltage region. A recess is formed on the substrate by removing the sacrificial oxide layer therefrom. A high voltage oxide layer(70) is grown in the recess and under the recess.</p> |
