| 摘要 |
<p>A drive circuit (1) for an IGBT (10) includes an H-bridge circuit (80) using first to fourth switch elements (Q1 - Q4). When a control unit (20) receives a command for changing the IGBT (10) from an on state to an off state, it switches states of the first to fourth switch elements from a first state in which the first and fourth switch elements (Q1 and Q4) are in an on state and the second and third switch elements (Q2 and Q3) are in an off state to a second state in which the first and fourth switch elements (Q1 and Q4) are in the off state and the second and third switch elements (Q2 and Q3) are in the on state. This structure of the drive circuit (1) can apply a reverse bias to the IGBT (1) from a single power supply (15).</p> |
