发明名称 |
Circuit to increase breakdown voltage of MOS transistors at low temperatures |
摘要 |
<p>The method involves checking whether the temperature of an electronic circuit is low. A metal oxide transistor is heated to a predetermined temperature before applying voltage nearer to breakdown voltage of the metal oxide transistor, to transistor when electronic circuit is at low temperature. An independent claim is included for electronic circuit arrangement.</p> |
申请公布号 |
EP2164174(A2) |
申请公布日期 |
2010.03.17 |
申请号 |
EP20090168721 |
申请日期 |
2009.08.26 |
申请人 |
OSRAM GESELLSCHAFT MIT BESCHRAENKTER HAFTUNG |
发明人 |
MÜHLSCHLEGEL, JOACHIM |
分类号 |
H05B41/392;H01L23/34;H03K19/003 |
主分类号 |
H05B41/392 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|