| 摘要 |
PURPOSE: A semiconductor trench structure and a method thereof are provided to reduce influence of parasitic devices adjacent to a trench by providing a stress hermetic sealing configuration reducing the inclusion of contaminants in the core region of the trench. CONSTITUTION: A semiconductor trench structure and a method thereof comprise a semiconductor material(110), a trench(422), and a dielectric layer(128). The semiconductor material includes a buried layer between a substrate(121) and a semiconductor layer(124). The trench is expanded from the major surface to the inside the semiconductor material, and includes an upper sidewall surfaces, a bottom-sidewall surfaces, and a bottom surface. The dielectric layer covers the bottom-sidewall surfaces and the bottom surface of the trench. |
