发明名称 |
Method of making a semiconductor device having improved contacts |
摘要 |
A semiconductor device and fabrication process wherein the device includes a conductive layer with a localized thick region positioned below the contact hole. In one embodiment of the invention, the thick region to which contact is made is formed by means of an opening in an underlayer of material. This embodiment of the device includes an underlayer of material having an opening therein; a layer of thin conductive material formed on the underlayer and in the opening; and overlayer of material having a contact hole therethrough formed on the layer of thin conductive material; a conductor contacting the layer of thin conductive material through the contact hole; and wherein the opening in the underlayer is positioned below the contact hole and sized and shaped to form a localized thick region in the layer of thin conductive material within the opening.
|
申请公布号 |
US7678691(B2) |
申请公布日期 |
2010.03.16 |
申请号 |
US20050213267 |
申请日期 |
2005.08.26 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
RHODES HOWARD E.;TRAN LUAN |
分类号 |
H01L21/4763;H01L21/768;H01L21/8234;H01L21/8242;H01L21/8244;H01L23/485;H01L23/522;H01L27/108 |
主分类号 |
H01L21/4763 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|