发明名称 Technique on ozone water for use in cleaning semiconductor substrate
摘要 An ultra-pure ozone water comprising an increased amount of an organic carbon capable of suppressing the reduction of the half-life period of ozone; and a method for producing the ultra-pure ozone water which comprises adding an organic solvent containing the above organic carbon to an ultra-pure ozone water containing a trace amount of the organic carbon. The above ultra-pure ozone water exhibits an increased half-life period of ozone, and thus, when used in cleaning a semiconductor substrate, allows the cleaning with an ozone water having an enhanced content of ozone, which results in exhibiting an enhanced cleaning capability and cleaning efficiency for an organic impurities, metallic impurities and the like adhered to the substrate, due to enhanced oxidizing action of ozone.
申请公布号 US7678200(B2) 申请公布日期 2010.03.16
申请号 US20050522717 申请日期 2005.08.24
申请人 SUMITOMO MITSUBISHI SILICON CORPORATION;CHLORINE ENGINEERS CORP. LTD.;ECHO GIKEN CO. LTD. 发明人 TAKEMURA MAKOTO;FUKUDA YASUO;SOUDA KAZUAKI;KATO MASAAKI;SUHARA EIJI
分类号 B08B3/00;C11D7/26;B08B3/02;B08B3/08;C02F1/68;C02F1/78;C11D3/39;C11D7/50;C11D7/60;C11D11/00;C11D17/08;H01L21/304;H01L21/306;H01L21/308 主分类号 B08B3/00
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