| 摘要 |
A method of formation of contacts with cobalt silicide since is disclosed. For example, after siliciding with the SOM solution, both unreacted sections of the deposition layer including, for example, cobalt as initial layer for the siliciding and an oxidation protection layer including titanium and deposited by means of cathode beam sputtering, for instance, may be removed rapidly and with high selectivity relative to the cobalt silicide and other, densified metal structures and metal layers.
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