发明名称 Buried bitline with reduced resistance
摘要 A memory cell array includes a number of memory cells, each of the memory cells including a source and a drain region defined by corresponding bitlines within a semiconductor substrate. Each of the bitlines has a doped semiconductor region as well as a conductive region in direct electrical contact with the doped semiconductor region.
申请公布号 US7678654(B2) 申请公布日期 2010.03.16
申请号 US20060478313 申请日期 2006.06.30
申请人 QIMONDA AG 发明人 KLEINT CHRISTOPH;FITZ CLEMENS;BEWERSDORFF-SARLETTE ULRIKE;LUDWIG CHRISTOPH;PRITCHARD DAVID;MUELLER TORSTEN;BOUBEKEUR HOCINE
分类号 H01L21/8247;H01L29/792 主分类号 H01L21/8247
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