发明名称 |
Method of fabricating a recess gate type transistor |
摘要 |
A semiconductor device having recess gates and a method for fabricating the same. The semiconductor device includes a semiconductor substrate having inverse triangular recesses formed therein; a gate insulating film having a designated thickness formed on the semiconductor substrate; gate electrodes formed on the gate insulating film so that the gate electrodes fill the inverse triangular recesses and protrude from the surface of the semiconductor substrate; and first and second junction regions formed in the semiconductor substrate and opposed to each other so that the corresponding one of the gate electrodes is interposed therebetween.
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申请公布号 |
US7678653(B2) |
申请公布日期 |
2010.03.16 |
申请号 |
US20090371798 |
申请日期 |
2009.02.16 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
ROUH KYOUNG BONG;JIN SEUNG WOO;LEE MIN YONG;JUNG YONG SOO |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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