发明名称 |
Method of fabricating an enhanced resurf HVPMOS device |
摘要 |
An HV PMOS device formed on a substrate having an HV well of a first polarity type formed in an epitaxial layer of a second polarity type includes a pair of field oxide regions on the substrate and at least partially over the HV well. Insulated gates are formed on the substrate between the field oxide regions. Stacked hetero-doping rims are formed in the HV well and in self-alignment with outer edges of the gates. A buffer region of the first polarity type is formed in the HV well between and in self-alignment with inner edges of the gates. A drift region of the second polarity type is formed in the buffer region between and in self-alignment with inner edges of the gates. The drift region includes a region having a gradual dopant concentration change, and includes a drain region of the second polarity type.
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申请公布号 |
US7678656(B2) |
申请公布日期 |
2010.03.16 |
申请号 |
US20070669233 |
申请日期 |
2007.01.31 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
CAI JUN;HARLEY-STEAD MICHAEL;HOLT JIM G. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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