发明名称 MOSFET GATE DRIVE WITH REDUCED POWER LOSS
摘要 A gate driver for a power MOSFET in, for example, a DC-DC converter switches the MOSFET between a fully-on condition and a low-current condition instead of switching the MOSFET between fully-on and fully-off conditions. The amount of charge that must be transferred to charge and discharge the gate of the MOSFET is thereby reduced, and the efficiency of the MOSFET is improved. A feedback circuit may be used to assure that the magnitude of current in the power MOSFET in its low-current condition is correct. Alternatively, a trimming process may be used to correct the magnitude of the voltage supplied by the gate driver to the gate of the power MOSFET in the low-current condition.
申请公布号 KR20100029209(A) 申请公布日期 2010.03.16
申请号 KR20097026341 申请日期 2008.04.30
申请人 ADVANCED ANALOGIC TECHNOLOGIES, INC. 发明人 WILLIAMS RICHARD K.
分类号 H02M1/08;H03K17/687 主分类号 H02M1/08
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