发明名称 |
Transistor performance enhancement using engineered strains |
摘要 |
A semiconductor substrate having metal oxide semiconductor (MOS) devices, such as an integrated circuit die, is mechanically coupled to a stress structure to apply a stress that improves the performance of at least a portion of the MOS devices on the die.
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申请公布号 |
US7679145(B2) |
申请公布日期 |
2010.03.16 |
申请号 |
US20040930247 |
申请日期 |
2004.08.31 |
申请人 |
INTEL CORPORATION |
发明人 |
HE JUN;MA ZHIYONG;MAIZ JOSE A.;BOHR MARK;GILES MARTIN D.;XU GUANGHAI |
分类号 |
H01L29/76;H01L23/34;H01L23/495;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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