发明名称 |
Semiconductor device and fabrication process thereof |
摘要 |
There is provided a semiconductor device having a device isolation region of STI structure formed on a silicon substrate so as to define a device region, wherein the device isolation region comprises a device isolation trench formed in the silicon substrate, and a device isolation insulation film filling the device isolation trench. At least a surface part of the device isolation insulation film is formed of an HF-resistant film.
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申请公布号 |
US7678641(B2) |
申请公布日期 |
2010.03.16 |
申请号 |
US20050211103 |
申请日期 |
2005.08.25 |
申请人 |
FUJITSU MICROELECTRONICS LIMITED |
发明人 |
MORI TOSHIFUMI;OOKOSHI KATSUAKI;WATANABE TAKASHI;OHTA HIROYUKI |
分类号 |
H01L29/00 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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