发明名称 |
Method for fabricating semiconductor device with recess gate |
摘要 |
A method for fabricating a semiconductor device includes forming a mask pattern over a substrate; etching a certain portion of the substrate using the mask pattern as an etch mask to form a first recess having sidewalls; forming a polymer-based layer over the sidewalls of the first recess and a top surface of the mask pattern; etching the substrate beneath the first recess using the mask pattern and the polymer-based layer as an etch mask to form a second recess wider and more rounded than the first recess, the second recess and the first recess constituting a bulb-shaped recess; and forming a gate pattern over the bulb-shaped recess.
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申请公布号 |
US7678535(B2) |
申请公布日期 |
2010.03.16 |
申请号 |
US20060477867 |
申请日期 |
2006.06.30 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
LEE JUNG-SEOCK;HAN KY-HYUN |
分类号 |
H01L29/812;H01L21/336 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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