| 摘要 |
Each of three light receiving sections has a P-type well having a P+-type layer and an N-type layer formed therein. The P+-type layer is diffused from substrate surface to depth d1. A PN junction forming portion of the N-type layer is diffused from depth d1 to depth d2 which is greater than depth d1 so as to form, with the P-type well, a PN junction of a photodiode at depth d2. Depths d1 as well as depths d2 of the three light receiving sections are different from each other. The N-type layer has a charge output portion which is diffused from the PN junction to the substrate surface, and which is coupled by circuit coupling to a MOS transistor for reading out charge. This allows each light receiving section to have spectral characteristics, thereby providing a solid state imaging element and a solid state imaging device without using color filters.
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