| 发明名称 |
Semiconductor device, and method and apparatus for manufacturing the same |
| 摘要 |
A SiO2 film is formed on a semiconductor substrate. Then, a SiN film is formed on the SiO2 film. In this event bis(tertiary butyl amino) silane and NH3 are used as a material gas, and the film forming temperature is set to 600° C. or lower.
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| 申请公布号 |
US7678711(B2) |
申请公布日期 |
2010.03.16 |
| 申请号 |
US20050147212 |
申请日期 |
2005.06.08 |
| 申请人 |
FUJITSU MICROELECTRONICS LIMITED |
发明人 |
HORI MITSUAKI;OHTA HIROYUKI;OOKOSHI KATSUAKI |
| 分类号 |
H01L21/31;C23C16/00;C23C16/02;C23C16/34;H01L21/28;H01L21/314;H01L21/318;H01L21/8234;H01L29/51;H01L29/76;H01L29/78 |
主分类号 |
H01L21/31 |
| 代理机构 |
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代理人 |
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| 主权项 |
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