发明名称 |
Method for the production of a semiconductor substrate comprising a plurality of gate stacks on a semiconductor substrate, and corresponding semiconductor structure |
摘要 |
A semiconductor structure having a plurality of gate stacks on a semiconductor substrate provided with a gate dielectric. The gate stacks have a lower first layer made of polysilicon, an overlying second layer made of a metal silicide, and an upper third layer made of an insulating material, and a sidewall oxide on the sidewalls of the first and second layers. The sidewall oxide is thinned or removed on one of the sidewalls, and the gate stacks have sidewall spacers made of the insulating material.
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申请公布号 |
US7679120(B2) |
申请公布日期 |
2010.03.16 |
申请号 |
US20060513447 |
申请日期 |
2006.08.31 |
申请人 |
QIMONDA, AG |
发明人 |
AMON JURGEN;FAUL JURGEN;RUDER THOMAS;SCHUSTER THOMAS |
分类号 |
H01L27/108;H01L21/60;H01L21/8242;H01L29/04;H01L29/10;H01L31/036;H01L31/0376;H01L31/20 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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