| 发明名称 |
Resistive memory including selective refresh operation |
| 摘要 |
A memory includes an array of phase change memory cells and a first circuit. The first circuit is for refreshing only memory cells within the array of phase change memory cells that are programmed to non-crystalline states in response to a request for a refresh operation.
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| 申请公布号 |
US7679980(B2) |
申请公布日期 |
2010.03.16 |
| 申请号 |
US20060602719 |
申请日期 |
2006.11.21 |
| 申请人 |
QIMONDA NORTH AMERICA CORP. |
发明人 |
HAPP THOMAS;PHILIPP JAN BORIS |
| 分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
| 代理机构 |
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代理人 |
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