发明名称 Image sensor and fabrication method thereof
摘要 An image sensor has a substrate, a dielectric layer positioned on the substrate, a pixel array including a plurality of pixels defined on the substrate, a shield electrode positioned between any two adjacent pixel electrodes of the pixels, a photo conductive layer positioned on the shield electrode and the pixel electrodes, and a transparent conductive layer covering the photo conductive layer.
申请公布号 US7679157(B2) 申请公布日期 2010.03.16
申请号 US20060465815 申请日期 2006.08.21
申请人 POWERCHIP SEMICONDUCTOR CORP. 发明人 MIIDA TAKASHI
分类号 H01L31/062;H01L29/205;H01L31/113 主分类号 H01L31/062
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