发明名称 |
Semiconductor memory devices having redundancy arrays |
摘要 |
A semiconductor memory device includes a plurality of memory areas. Each of the memory areas includes a normal cell array and a redundancy cell array for repairing defective cells generated in the normal cell array such that the semiconductor memory device is usable even when memory arrays include defective cells. A size of a redundancy cell array of a first memory area is greater than a size of the redundancy cell arrays of the other memory areas.
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申请公布号 |
US7679975(B2) |
申请公布日期 |
2010.03.16 |
申请号 |
US20070806577 |
申请日期 |
2007.06.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KYUNG KYE-HYUN |
分类号 |
G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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