发明名称 Semiconductor memory devices having redundancy arrays
摘要 A semiconductor memory device includes a plurality of memory areas. Each of the memory areas includes a normal cell array and a redundancy cell array for repairing defective cells generated in the normal cell array such that the semiconductor memory device is usable even when memory arrays include defective cells. A size of a redundancy cell array of a first memory area is greater than a size of the redundancy cell arrays of the other memory areas.
申请公布号 US7679975(B2) 申请公布日期 2010.03.16
申请号 US20070806577 申请日期 2007.06.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KYUNG KYE-HYUN
分类号 G11C29/00 主分类号 G11C29/00
代理机构 代理人
主权项
地址