发明名称 |
Semiconductor memory and fabrication method for the same |
摘要 |
A semiconductor memory includes a plurality of active regions; a plurality of bit line contacts disposed on respective active regions; a plurality of first local lines formed in an island shape and in contact with upper surfaces of the plurality of bit line contacts; a plurality of first via contacts in contact with the upper surfaces of the plurality of first local lines and aligned in a direction parallel to the active regions; a first bit line in contact with one of the plurality of first via contacts and extending in a direction parallel to the active regions; and a plurality of second via contacts arranged above the first via contacts that are not in contact with the first bit line through respective second local lines.
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申请公布号 |
US7679108(B2) |
申请公布日期 |
2010.03.16 |
申请号 |
US20060339483 |
申请日期 |
2006.01.26 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MATSUNAGA YASUHIKO;ARAI FUMITAKA;SAKUMA MAKOTO |
分类号 |
H01L27/10 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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