发明名称 |
Vertical type semiconductor device and manufacturing method of the device |
摘要 |
A vertical semiconductor element comprises: an electro-conductive substrate; a GaN layer, as a nitride compound semiconductor layer, which is selectively grown as a convex shape on one surface of the electro-conductive substrate through a buffer layer; a source electrode as a first electrode formed on the GaN layer; and a drain electrode as a second electrode formed on another surface of the electro-conductive substrate.
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申请公布号 |
US7679104(B2) |
申请公布日期 |
2010.03.16 |
申请号 |
US20070937090 |
申请日期 |
2007.11.08 |
申请人 |
THE FURUKAWA ELECTRIC CO., LTD. |
发明人 |
SATO YOSHIHIRO;KATO SADAHIRO;IWAMI MASAYUKI;SASAKI HITOSHI;OOTOMO SHINYA;NIIYAMA YUKI |
分类号 |
H01L29/267 |
主分类号 |
H01L29/267 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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