发明名称 DOUBLE PATTERNING PROCESS
摘要 <p>PURPOSE: A double patterning process is provided to conveniently process minute patterns by enabling double patterning and to process minute patterns through immersion exposure. CONSTITUTION: A double patterning process comprises the steps of: forming a resist film by applying a first positive type resist material on a substrate to be processed; irradiating high energy beam on a resist film, heating and developing the film after exposure to obtain a first positive type pattern; heating the first positive type pattern and irradiating high energy beam to the first positive type pattern; insolublizing the film in a solvent of a second resist material and in alkaline development when patterning the second resist material; and applying the second resist material on the first resist pattern; and irradiating high energy beam to the second resist film to obtain a second resist pattern.</p>
申请公布号 KR20100029049(A) 申请公布日期 2010.03.15
申请号 KR20090083334 申请日期 2009.09.04
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 TAKEMURA KATSUYA;NISHI TSUNEHIRO;HATAKEYAMA JUN;OHASHI MASAKI;KINSHO TAKESHI
分类号 G03F7/004;G03F7/20;H01L21/027 主分类号 G03F7/004
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