发明名称 |
DOUBLE PATTERNING PROCESS |
摘要 |
<p>PURPOSE: A double patterning process is provided to conveniently process minute patterns by enabling double patterning and to process minute patterns through immersion exposure. CONSTITUTION: A double patterning process comprises the steps of: forming a resist film by applying a first positive type resist material on a substrate to be processed; irradiating high energy beam on a resist film, heating and developing the film after exposure to obtain a first positive type pattern; heating the first positive type pattern and irradiating high energy beam to the first positive type pattern; insolublizing the film in a solvent of a second resist material and in alkaline development when patterning the second resist material; and applying the second resist material on the first resist pattern; and irradiating high energy beam to the second resist film to obtain a second resist pattern.</p> |
申请公布号 |
KR20100029049(A) |
申请公布日期 |
2010.03.15 |
申请号 |
KR20090083334 |
申请日期 |
2009.09.04 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
TAKEMURA KATSUYA;NISHI TSUNEHIRO;HATAKEYAMA JUN;OHASHI MASAKI;KINSHO TAKESHI |
分类号 |
G03F7/004;G03F7/20;H01L21/027 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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