| 摘要 |
PURPOSE: A method for verifying a non-volatile memory device is provided to minimize the generation of an under-program by stably maintaining a current flowing through a cell string in a verification operation. CONSTITUTION: A program operation is performed to memory cells connected to a k-th word line in a memory cell block including n word lines(620). A verification voltage is applied to the word lines to be reduced inversely as the k value. A pass voltage is applied to the other word lines. The k value is in inverse proportion to the program order of the memory cells. The program operation is repeated until the memory cells to be programmed become more than the verification voltage(650). |
