| 摘要 |
PURPOSE: The pump control circuit of a semiconductor memory device is provided to reduce a test time by variably controlling back-bias pumping in a burn-in test operation mode and a word-line test operation mode. CONSTITUTION: A pumping voltage generation unit(120) generates a back-bias pumping voltage in a normal operation mode. An operation unit(150) responds to the burn-in test operation mode and a plurality of word-line test operation modes. The operation unit generates an enable signal. A second pumping voltage generation unit(130) operates by the enable signal from the operation unit. A back-bias pumping is variably controlled in the burn-in test operation mode. |
