| 摘要 |
<p>PURPOSE: A phase change memory device and a method for manufacturing the same are provided to prevent the characteristic deterioration of an adjacent transistor by forming a vertical PN diode and forming a transistor around the PN diode. CONSTITUTION: A silicon substrate comprises a cell region and an adjacent region. A first insulating layer(104) is formed on the cell region. The first insulating layer comprises a first hole. The cell switching element is formed within the first hole. The heater(114a) is formed on a switching element. A gate(120) is formed in the adjacent region. A gate comprises a gate insulating layer(106), a first conductive film(108), a second conductive film(114), and a hard mask film(116). The second insulating layer(124) comprises the second hole. The second hole exposes the heater. The second insulating layer exposes the hard mask film of the gate. A shield layer(126) is formed on sidewall and the second insulating layer of the second hole. A phase change film is formed on the second hole.</p> |
