发明名称 PLASMA-CVD-APPARATUR
摘要 <p>A plasma CVD apparatus in which microwave power is supplied into a reaction chamber (2) provided inside an annular waveguide (5) through an antenna (20) provided the inner peripheral part of the waveguide (5) so as to produce a plasma inside the reaction chamber (2) and to form a film by a vapor growth synthesizing method. A cooler (27) is disposed between the annular waveguide (5) and the reaction chamber (2) so as to maintain the low temperature of the annular waveguide (5). <IMAGE></p>
申请公布号 AT460510(T) 申请公布日期 2010.03.15
申请号 AT20020733325T 申请日期 2002.06.05
申请人 KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.) 发明人 TAMAGAKI, HIROSHI;OKIMOTO, TADAO;YUTAKA, HIDEKI
分类号 C23C16/511;B01J19/08;C03B37/018;H01J37/32;H05B6/70;H05B6/80;H05H1/24;H05H1/46 主分类号 C23C16/511
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