| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to increase an effective channel length of transistor by growing a carbon nano tube layer between monocrystal silicon layers. CONSTITUTION: A plurality of hemispherical silicon layers(104a) are formed on a semiconductor substrate(100). A carbon nano tube layer(106) is formed between a plurality of hemispherical silicon layers. A gate insulating layer(108) is formed on the plural hemispherical silicon layers, the semiconductor substrate, and the carbon nano tube layer. The gate is formed on the gate insulating layer.</p> |
