| 摘要 |
<p>PURPOSE: A phase change memory device and a method for manufacturing the same are provided to obtain a uniform interface between a heater and a phase change film by forming a heater to be self-aligned. CONSTITUTION: A silicon substrate(100) comprises a cell region and a adjacent region. A first insulating layer(104) is formed on the cell region of the silicon substrate. The first insulating layer comprises a plurality of holes. The cell switching element is formed within the hole. A heat sink(118a) is formed on a switching unit. The heater(140) is formed on at the cent of the heat sink. The spacer surrounds the heater. The gate(130) comprises a gate insulating layer(110), a first conductive film(112), a laminating structure of a hard mask film(120), and a second conductive film(118). A second insulating layer exposes the hard mask film of the spacer of the cell region and heater and adjacent region.</p> |
