| 摘要 |
<p>PURPOSE: A method for manufacturing a chromeless phase shift mask is provided to form a critical phase shift area using a self-aligning of the phase shift area. CONSTITUTION: A chromeless phase shift mask includes phase shift areas with a groove shape. A recess area with a first depth(101) is formed in a substrate part(100) between the phase shift areas. The recess area is filled with a plug for a mask. A mask pattern is formed on the plug for the mask. The mask pattern is arranged on the plug for the mask. A groove with a second depth is formed on the substrate using the mask pattern.</p> |
