| 摘要 |
This invention provides a method for low-refractive index film formation, which can form a thin film having a uniform composition distribution within the film and a low-refractive index, a low-refractive index film formed by the method for low-refractive index film formation, and an antireflection film using the low-refractive index film. The method for low-refractive index film formation comprises forming a low-refractive index film formed of MgF-SiOon a substrate (11) by reactive sputtering. Targets (4A, 4B) as a sinter of MgF-SiOare provided. An alternating voltage having a frequency of 20 to 90 kHz is applied across the substrate (11) and the targets (4A, 4B) under a mixed gas atmosphere composed of inert gas and Ofor sputtering deposition.
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