| 摘要 |
<p>PURPOSE: A semiconductor memory device and a manufacturing method thereof are provided to reduce leakage current from a semiconductor at a common source line by preventing an interconnect layer from being contacted to the semiconductor directly. CONSTITUTION: A semiconductor memory device comprises a semiconductor substrate(11), a first block, a second block, a first interconnect layer, and a second interconnect layer. The first block has a plurality of first memory cells and first selecting transistors. A plurality of first selecting transistors are serially connected to the end parts of the current path of first memory cells. The second block has a plurality of second memory cells and second selection transistors. The first interconnect layer is provided on a diffusion region between the second block and the first block. The second interconnect layer is contacted with the top side of the first interconnect layer. The second interconnect layer comprises a first part and a second part.</p> |
