METHOD OF FORMING GERMANIUM NANOCRYSTALS AND METHOD OF FABRICATING A NON-VOLATILE MEMORY DEVICE HAVING THE SAME

摘要

PURPOSE: A method for forming a germanium nano-crystal and a method for manufacturing a non-volatile memory device including the same are provided to control the position, the size and the crystallinity of the germanium nano-crystals by adjusting the position and the thickness of an amorphous germanium layer. CONSTITUTION: An electronic beam is radiated on a semiconductor substrate. The semiconductor substrate includes an amorphous germanium layer which is formed between a plurality of oxide layers. A plurality of germanum nano-crystal is formed in a B region which is between a tunnel oxide layer and a control oxide layer after a thermal treatment is performed on the substrate. The energy of the electronic beam ranges between 1MeV to 2MeV. The dose of the electronic beam ranges between 10^15/cm^2 to 10^17/cm^2.