| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve the intensity of a combination between a copper via and a lower copper pad by removing a vacancy in a copper plating film. CONSTITUTION: A wiring insulation layer(110) is etched to form a copper pad area. A metal barrier layer(200) and a copper seed layer are deposited in the copper pad area. The copper pad area is filled with copper through a plating process. After the copper is plated on the copper pad area, a wafer is thermally treated. Copper wiring is formed on the wafer through a planarization process. An upper copper pad(700) and a copper via(600) are formed through a copper filling the planarization processes.
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