发明名称 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A thin film transistor array panel and a manufacturing method thereof are provided, which can enhance aperture ratio by reducing a level difference of a display panel. CONSTITUTION: A thin film transistor array panel comprises a first gate line, an electrode for maintenance, a gate insulating layer(140), semiconductors(154,157), a data line, drain electrodes(175,177), a protection film(180), and a pixel electrode(191). The first gate line is formed on the substrate and comprises the gate electrode(124). The electrode for maintenance is formed in the same layer as the first gate line. The gate insulating layer is formed on the first gate line and electrode for maintenance. The semiconductor comprises a channel section and is formed on the gate insulating layer. The data line comprises the source electrode(173) and is formed on the semiconductor. The drain electrode is formed on the semiconductor. The protection film comprises a contact hole(185). The pixel electrode is connected to the drain electrode in the contact hole and is formed on the protection film.
申请公布号 KR20100028367(A) 申请公布日期 2010.03.12
申请号 KR20080087372 申请日期 2008.09.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YOU, CHUN GI
分类号 G02F1/136;H01L29/786 主分类号 G02F1/136
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