METHOD FOR FABRICATING SEMICONDUCTOR DEVICE HAVING SADDLE FIN TRANSISTOR

摘要

PURPOSE: A method for manufacturing a semiconductor device including a saddle fin transistor is provided to secure the property of the semiconductor device and a process margin by preventing the contact between a poly-silicon layer and a landing plug contact. CONSTITUTION: Gate electrodes(510) are formed on a semiconductor substrate. An insulation layer(530) covers the gate electrodes. The area in which a contact is formed in the insulation layer is etched to expose an active area and an element isolation layer(502) between the gate electrodes. The exposed element isolation layer is etched to form a cavity. An insulation layer is formed on the surface of the cavity. A landing plug is contacted to the active area.